6 AMP ULTRAFAST RECOVERY DIODES

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DEC

General Purpose Diode

The UTC UFR6030C utilizes advanced processing techniquesto achieve ultrafast recovery times and higher forward current. Itssoft recovery characteristics and high reliability suit for wideindustrial applications. Ultrafast Recovery Time Soft Recovery Characteristics Low Recovery Loss Low Forward Voltage High Surge Current Capability Low Leakage Current;

UTC

友顺

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

文件：63.58 Kbytes 页数：6 Pages

NEC

瑞萨

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

文件：63.58 Kbytes 页数：6 Pages

NEC

瑞萨

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt

文件：78 Kbytes 页数：3 Pages

ZETEX