GSIB15A60N

Single-PhaseSingleIn-LineBridgeRectifiers

FEATURES •ULrecognitionfilenumberE54214 •Thinsinglein-Iinepackage •Glasspassivatedchipjunction •Highsurgecurrentcapability •Highcasedielectricstrengthof2500VRMS •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance

ITK15A60U

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.3Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforro

K15A60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.24Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

S15A60

SCHOTTKYBARRIERRECTIFIERS(15A,30-60V)

UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal. Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprotectiondiode

S15A60PT

SCHOTTKYBARRIERRECTIFIER

SF15A60

SuperFastRecoveryRectifiers

SF15A60F

SuperFastRecoveryRectifiers

SF15A60U

15Amperes,600VoltsSingleHyperFastSoftRecoveryEpitaxialDiode

SFF15A60U

15Amperes,600VoltsInsulatedHyperFastSoftRecoveryEpitaxialDiode

SR15A60F-G

SchottkyBarrierRectifiers