isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.3Ω (typ.) • Low leakage current: IDSS = 100 μ A (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for ro

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ISC

无锡固电

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

SCHOTTKY BARRIER RECTIFIERS(15A,30-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diode

文件：235.5 Kbytes 页数：3 Pages

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIER

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CHENMKO

力勤