N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

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4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET

The UTC UF830K-MT is a N-Channel enhancement modesilicon gate power MOSFET is designed high voltage, high speedpower switching applications such as switching regulators,switching converters, solenoid, motor drivers, relay drivers. • RDS(ON) < 1.50Ω @ VGS =10V\n• Single Pulse Avalanche Energy Rated\n• Rugged- SOA is Power Dissipation Limited\n• Fast Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件：264.55 Kbytes 页数：6 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：321.09 Kbytes 页数：9 Pages

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4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing

文件：280.51 Kbytes 页数：8 Pages

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