RF Power MOSFET Transistor 40W, 100-500 MHz, 28V

Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices

文件：239.62 Kbytes 页数：3 Pages

MA-COM

RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：197.23 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor

文件：663.93 Kbytes 页数：4 Pages

MA-COM

RF Power MOSFET Transistor 5W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·100 MHz to 500 MHz Operation\n·Lower Noise Floor\n·Lower Capacitances for Broadband Operation\n·DMOS Structure\n·Common Source Configuration;

MACOM

包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：MOSFET 40W 28V 100-500MHZ

MACOM Technology Solutions