RF Power MOSFET Transistor 20W, 100-500 MHz, 28V

Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor

文件：205.97 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor

文件：219.11 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor

文件：205.97 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：205.97 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：620.85 Kbytes 页数：4 Pages

MA-COM

RF Power MOSFET Transistor 20W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·Lower Noise Floor\n·Common Source Configuration\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

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包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：MOSFET 20W 28V 100-500MHZ

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