RF Power MOSFET Transistor 10W, 100-500 MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor • 100 MHz to 500 MHz operation

文件：218.53 Kbytes 页数：2 Pages

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RF MOSFET Power Transistor, 10W, 28V 100-500MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor • 100 MHz to 500 MHz Operation

文件：148.06 Kbytes 页数：2 Pages

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RF Power MOSFET Transistor

文件：218.53 Kbytes 页数：2 Pages

MA-COM

RF Power MOSFET Transistor

文件：218.53 Kbytes 页数：2 Pages

MA-COM

RF Power MOSFET Transistor

文件：635.88 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor 10W, 100-500 MHz, 28V

·N-Channel enhancement mode device\n·100 MHz to 500 MHz operation\n·Lower noise floor\n·Common source configuration\n·Lower capacitances for broadband operation\n·DMOS structure;

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