RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices

文件：224.2 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, 15W, 28V 100-500MHz

Features • N-Channel Enhancement &lode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：208.7 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

文件：224.2 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：224.2 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：648.08 Kbytes 页数：4 Pages

MA-COM

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

·N-channel Enhancement Mode Device\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices\n·DMOS Structure\n·Lower Noise Figure than Competitive Devices;

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