RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant

文件：235.57 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：188.74 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

文件：235.57 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：235.57 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：660.97 Kbytes 页数：4 Pages

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RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·RoHS Compliant\n·Lower Noise Figure than Competitive Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

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