RF Power MOSFET Transistor 5W, 100-500 MHz, 28V

RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation

文件：210.97 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DUOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor • 100 MHz to 500 MHz Operation

文件：196.4 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

文件：213.04 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation

文件：213.04 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

文件：213.04 Kbytes 页数：3 Pages

MA-COM

1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·100 MHz to 500 MHz Operation\n·Lower Noise Floor\n·Common Source Configuration\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

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