ULTRA FAST RECOVERY RECTIFIER

Ultra Fast Recovery Rectifiers ● Ultra Fast Recovery ● 175°C Junction Temperature ● VRRM 300 to 500 Volts ● 1 Amp Current Rating ● tRR 50nS Max.

文件：89.97 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-Channel MOSFET uses advanced trench technology

文件：1.75558 Mbytes 页数：5 Pages

DOINGTER

杜因特

130A, 70V N-CHANNEL POWER MOSFET

The UTC UF130N07 is a high voltage MOSFET and is designedto have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM • Fast switching speed\n• RDS(ON) < 9.0mΩ @ VGS=10V, ID=65A\n• 100% avalanche tested\n• Improved dv/dt capability;

UTC

友顺

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

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NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

文件：87.15 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

文件：87.15 Kbytes 页数：12 Pages

NEC

瑞萨