Constant voltage control

ROHM

罗姆

Constant voltage control

文件：159.63 Kbytes 页数：5 Pages

ROHM

罗姆

Package：SC-90，SOD-323F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 16V 200MW UMD2

ROHM

罗姆

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection d

文件：288.21 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

文件：66.67 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection d

文件：288.21 Kbytes 页数：10 Pages

RENESAS

瑞萨