适用于 IGBT/SiC MOSFET 的汽车类 3.75kVrms 30A 单通道功能安全隔离式栅极驱动器

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable s • Split output driver provides 30-A peak source and 30-A peak sink currents\n• Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection\n• Configurable power transistor protections \n• Shunt resistor based overcurrent and short circuit protec;

TI

德州仪器

UCC5870-Q1 Functional Safety Compliant 15-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications

文件：2.85946 Mbytes 页数：113 Pages

TI

德州仪器

TI/德州仪器
HTSSOP14

TI/德州仪器

上传：上海意淼电子科技有限公司

TI
20-PowerTSSOP

TI

德州仪器

上传：深圳市佳斯泰科技有限公司

TI
20-VQFN

TI

德州仪器

上传：深圳市佳斯泰科技有限公司