UCC27519DBVT集成电路（IC）的栅极驱动器规格书PDF中文资料

UCC27519DBVT属于集成电路（IC）的栅极驱动器。由德州仪器制造生产的UCC27519DBVT栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

1 Features

1• Low-Cost, Gate-Driver Device Offering Superior

Replacement of NPN and PNP Discrete Solutions

• Pin-to-Pin Compatible With TI's TPS2828 and

TPS2829 devices

• 4-A Peak Source and 4-A Peak Sink Symmetrical

Drive

• Fast Propagation Delays (17-ns Typical)

• Fast Rise and Fall Times (8-ns and 7-ns Typical)

• 4.5-V to 18-V Single Supply Range

• Outputs Held Low During VDD UVLO (Ensures

Glitch-Free Operation at Power Up and Power

Down)

• CMOS Input Logic Threshold (Function of Supply

Voltage With Hysteresis)

• Hysteretic Logic Thresholds for High Noise

Immunity

• EN Pin for Enable Function (Allowed to Be No

Connect)

• Output Held Low when Input Pins are Floating

• Input Pin Absolute Maximum Voltage Levels Not

Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of –40°C to 140°C

• 5-Pin DBV Package (SOT-23)

2 Applications

• Switched-Mode Power Supplies

• DC-DC Converters

• Companion Gate Driver Devices for Digital Power

Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power

Devices (Such as GaN)

3 Description

The UCC27518 and UCC27519 single-channel, high-

speed, low-side gate driver device can effectively

drive MOSFET and IGBT power switches. Using a

design that inherently minimizes shoot-through

current, UCC27518 and UCC27519 can source and

sink high, peak-current pulses into capacitive loads

offering rail-to-rail drive capability and extremely small

propagation delay typically 17 ns.

The UCC27518 and UCC27519 provide 4-A source,

4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27518 and UCC27519 are designed to

operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to 140°C. Internal

under voltage lockout (UVLO) circuitry on the VDD

pin holds output low outside VDD operating range.

The capability to operate at low voltage levels such

as below 5 V, along with best-in-class switching

characteristics, is especially suited for driving

emerging wide band-gap power switching devices such as GaN power semiconductor devices.