UCC27519DBV集成电路（IC）的栅极驱动器规格书PDF中文资料

UCC27519DBV属于集成电路（IC）的栅极驱动器。由德州仪器制造生产的UCC27519DBV栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

1 Features

1• Low-Cost Gate-Driver Device Offering Superior

Replacement of NPN and PNP Discrete Solutions

• 4-A Peak-Source and Sink Symmetrical Drive

• Ability to Handle Negative Voltages (-5 V) at

Inputs

• Fast Propagation Delays (13-ns typical)

• Fast Rise and Fall Times (9-ns and 7-ns typical)

• 4.5 to 18-V Single-Supply Range

• Outputs Held Low During VDD UVLO (ensures

glitch-free operation at power up and power down)

• TTL and CMOS Compatible Input-Logic Threshold

(independent of supply voltage)

• Hysteretic-Logic Thresholds for High-Noise

Immunity

• Dual Input Design (choice of an inverting (IN- pin)

or non-inverting (IN+ pin) driver configuration)

– Unused Input Pin can be Used for Enable or

Disable Function

• Output Held Low when Input Pins are Floating

• Input Pin Absolute Maximum Voltage Levels Not

Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of –40°C to

+140°C

• 5-Pin DBV (SOT-23) Package Option

2 Applications

• Switch-Mode Power Supplies

• DC-to-DC Converters

• Companion Gate-Driver Devices for Digital-Power

Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power

Devices (such as GaN)

3 Description

The UCC27517A single-channel, high-speed, low-

side gate driver device is capable of effectively

driving MOSFET and IGBT power switches. Using a

design that inherently minimizes shoot-through

current, the UCC27517A is capable of sourcing and

sinking high peak-current pulses into capacitive loads

offering rail-to-rail drive capability and extremely small

propagation delay typically 13 ns.

The UCC27517A device is capable of handling –5 V

at input.

The UCC27517A provides 4-A source and 4-A sink

(symmetrical drive) peak-drive current capability at

VDD = 12 V.

The UCC27517A is designed to operate over a wide

VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage

Lockout (UVLO) circuitry on VDD pin holds output low

outside VDD operating range. The capability to

operate at low voltage levels such as below 5 V,

along with best-in-class switching characteristics, is

especially suited for driving emerging wide band-gap power-switching devices such as GaN power

semiconductor devices.