UCC27201ADR.B中文资料德州仪器数据手册PDF规格书

1 Features

• Drives two N-channel MOSFETs in high-side and

low-side configuration

• Negative voltage handling on HS (–18V)

• Maximum boot voltage 120V

• Maximum VDD voltage 20V

• On-chip 0.65V VF, 0.65Ω RD bootstrap diode

• 22ns propagation delay times

• 3A sink, 3A source output currents

• 8ns rise/7ns fall time with 1000pF load

• 1ns delay matching

• Undervoltage lockout for high-side and low-side

driver

• Specified from –40°C to 150°C

2 Applications

• Solar power optimizers and micro inverters

• Telecom and merchant power supplies

• Online and offline UPS

• Energy storage systems

• Battery test equipment

3 Description

The UCC2720xA family of high-frequency N-channel

MOSFET drivers include a 120V bootstrap diode and

high-side/low-side driver with independent inputs for

maximum control flexibility. This allows for N-channel

MOSFET control in half-bridge, full-bridge, twoswitch

forward and active clamp forward converters.

The low-side and the high-side gate drivers are

independently controlled and matched to 1ns between

the turn-on and turn-off of each other. In order

to improve performance in noisy power supply

environments the UCC2720xA has an enhanced ESD

input structure and also has the ability to withstand a

maximum of –18V on its HS pin.

An on-chip bootstrap diode eliminates the external

discrete diodes. Under-voltage lockout is provided for

both the high-side and the low-side drivers forcing the

outputs low if the drive voltage is below the specified

threshold.

Two versions of the UCC2720xA are offered. The

UCC27200A has high-noise immune CMOS input

thresholds while the UCC27201A has TTL-compatible

thresholds.