丝印：UCC21711Q；Package：SOIC(DW)；UCC21711-Q1 10A Automotive Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

1 Features • 5.7kVRMS single channel isolated gate driver • AEC-Q100 qualified for automotive applications – Device temperature grade 1: -40°C to +125°C ambient operating temperature range • SiC MOSFETs and IGBTs up to 2121Vpk • 33V maximum output drive voltage (VDD-VEE) • ±10A drive streng

文件：2.481 Mbytes 页数：55 Pages

TI

德州仪器

丝印：UCC21711Q；Package：SOIC(DW)；UCC21711-Q1 10A Automotive Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

1 Features • 5.7kVRMS single channel isolated gate driver • AEC-Q100 qualified for automotive applications – Device temperature grade 1: -40°C to +125°C ambient operating temperature range • SiC MOSFETs and IGBTs up to 2121Vpk • 33V maximum output drive voltage (VDD-VEE) • ±10A drive streng

文件：2.481 Mbytes 页数：55 Pages

TI

德州仪器