UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

文件：1.86827 Mbytes 页数：54 Pages

TI

德州仪器

丝印：UCC21710；Package：SOIC；UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

文件：1.86827 Mbytes 页数：54 Pages

TI

德州仪器

丝印：UCC21710；Package：SOIC；UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

文件：1.86827 Mbytes 页数：54 Pages

TI

德州仪器

适用于 IGBT/SiC MOSFET、具有 OC 检测和内部钳位的 5.7kVrms ±10A 单通道隔离式栅极驱动器

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.\n\nThe input side is isolated • 5.7-kVRMS single channel isolated gate driver\n• 33-V maximum output drive voltage (VDD-VEE)\n• 150-V/ns minimum CMTI\n• 400-mA soft turn-off under fault condition\n• Temperature sensing with NTC, PTC or thermal diode\n• Alarm FLT on over current and reset from RST/EN\n• Rejects 8 mm\n• Operating;

TI

德州仪器

UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

文件：1.86827 Mbytes 页数：54 Pages

TI

德州仪器

single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI

文件：543.14 Kbytes 页数：6 Pages

TI

德州仪器

single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI

文件：543.14 Kbytes 页数：6 Pages

TI

德州仪器

single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI

文件：543.14 Kbytes 页数：6 Pages

TI

德州仪器

适用于 IGBT/SiC MOSFET 且具有过流保护的汽车类 5.7kVrms 10A 单通道隔离式栅极驱动器

UCC21710-Q1 是一款电隔离单通道栅极驱动器，设计用于高达 1700V 的 SiC MOSFET 和 IGBT，具有先进的保护 功能、出色的动态性能和稳健性。\n\n输入侧通过 SiO2 电容隔离技术与输出侧相隔离，支持高达 1.5kVRMS 的工作电压、12.8kVPK 的浪涌抗扰度，隔离层寿命超过 40 年，并提供较低的器件间偏移和高 CMTI。 • 单通道 SiC/IGBT 隔离式栅极驱动器\n• 具有符合面向汽车 标准 （计划的认证）\n• 高达 1700V 的 SiC MOSFET 和 IGBT\n• 33V 最大输出驱动电压 (VDD-COM)\n• 高峰值驱动电流和高 CMTI\n• 有源米勒钳位 \n \n• RDY 上的 UVLO（具有电源正常指示功能） \n \n• 较短传播延迟和较小脉冲/器件间偏移\n• 工作温度范围：–40°C 至 125°C\n• 安全相关认证（计划）： \n• 符合 DIN V VDE V 0884-11 (VDE V 0884-11):2017-01 标准的 8000VPK VIOTM 和 2;

TI

德州仪器

包装：散装 功能：栅极驱动器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL BOARD FOR UCC21710-Q1

TI

德州仪器