丝印：UCC21551C；Package：SOIC；UCC21551x 4-A, 6-A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4-A peak source and 6-A peak sink output • Common-mode transient immunity (CMTI) greater than 125 V/ns • Up to 25-V VDD output drive supply – 12-V and 17-V VDD UVLO

文件：1.67477 Mbytes 页数：47 Pages

TI

德州仪器

丝印：UCC21551C；Package：SOIC；UCC21551x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V and 17V VDD UV

文件：1.7023 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：UCC21551CQ；Package：SOIC；UCC21551x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following result – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater t

文件：1.71381 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：UCC21551CQ；Package：SOIC；UCC21551x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following result – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater t

文件：2.46409 Mbytes 页数：58 Pages

TI

德州仪器

丝印：UCC21551C；Package：SOIC；UCC21551x 4-A, 6-A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4-A peak source and 6-A peak sink output • Common-mode transient immunity (CMTI) greater than 125 V/ns • Up to 25-V VDD output drive supply – 12-V and 17-V VDD UVLO

文件：1.67477 Mbytes 页数：47 Pages

TI

德州仪器

丝印：UCC21551C；Package：SOIC；UCC21551x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V and 17V VDD UV

文件：1.7023 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：UCC21551CQ；Package：SOIC；UCC21551x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following result – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater t

文件：1.71381 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：UCC21551CQ；Package：SOIC；UCC21551x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following result – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater t

文件：2.46409 Mbytes 页数：58 Pages

TI

德州仪器

UCC21551x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following result – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater t

文件：2.46409 Mbytes 页数：58 Pages

TI

德州仪器

UCC21551x-Q1 Automotive 4-A, 6-A, Reinforced Isolation Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 – Device HBM ESD classification level 3A – Device CDM ESD classification level C6 • Junction temperature range –40 to +150°C • Up to 4-A p

文件：1.64295 Mbytes 页数：46 Pages

TI1

德州仪器