型号：UCC21737QDWRQ1；Package：SOIC；UCC21737-Q1 Automotive 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI

1 Features • 5.7-kVRMS single channel isolated gate driver • AEC-Q100 Qualified with the following results: – Device temperature grade 0: -40°C to +150°C ambient operating temperature range – Device HBM ESD classification level 3A – Device CDM ESD classification level C6 • SiC MOSFETs and I

文件：2.58711 Mbytes 页数：54 Pages

TI

德州仪器

型号：UCC21737QDWRQ1；Package：SOIC；UCC21737-Q1 Automotive 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI

1 Features • 5.7-kVRMS single channel isolated gate driver • AEC-Q100 Qualified with the following results: – Device temperature grade 0: -40°C to +150°C ambient operating temperature range – Device HBM ESD classification level 3A – Device CDM ESD classification level C6 • SiC MOSFETs and I

文件：2.58711 Mbytes 页数：54 Pages

TI

德州仪器