UCC21551-Q1_V03中文资料德州仪器数据手册PDF规格书

1 Features

• Universal: dual low-side, dual high-side or halfbridge

driver

• AEC-Q100 qualified with the following result

– Device temperature grade 1

• Junction temperature range –40 to +150°C

• Up to 4A peak source and 6A peak sink output

• Common-mode transient immunity (CMTI) greater

than 125V/ns

• Up to 25V VDD output drive supply

– 5V, 8V, 12V and 17V VDD UVLO options

• Switching parameters:

– 33ns typical propagation delay

– 5ns maximum delay matching

– 6ns maximum pulse-width distortion

– 10μs maximum VDD power-up delay

• UVLO protection for all power supplies

• Fast enable for power sequencing

2 Applications

• On-board battery chargers

• High-voltage DC-DC converter

• Automotive HVAC, body electronics

3 Description

The UCC21551x-Q1 is an isolated dual channel gate

driver family with programmable dead time and wide

temperature range. It is designed with 4A peak-source

and 6A peak-sink current to drive power MOSFET,

SiC, and IGBT transistors.

The UCC21551x-Q1 can be configured as two lowside

drivers, two high-side drivers, or a half-bridge

driver. The input side is isolated from the two output

drivers by a 5kVRMS isolation barrier, with a minimum

of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable

dead time, disable feature to shut down both outputs

simultaneously, and integrated de-glitch filter that

rejects input transients shorter than 5ns. All supplies

have UVLO protection.

With all these advanced features, the UCC21551x-

Q1 device enables high efficiency, high power

density, and robustness in a wide variety of power

applications.