UCC21551-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• Universal: dual low-side, dual high-side or halfbridge

driver

• AEC-Q100 qualified with the following results

– Device temperature grade 1

– Device HBM ESD classification level H2

– Device CDM ESD classification level C4B

• Junction temperature range –40 to +150°C

• Up to 4-A peak source and 6-A peak sink output

• Common-mode transient immunity (CMTI) greater

than 125 V/ns

• Up to 25-V VDD output drive supply

– 12-V VDD UVLO option

• Switching parameters:

– 33-ns typical propagation delay

– 5-ns maximum delay matching

– 5-ns maximum pulse-width distortion

– 10-μs maximum VDD power-up delay

• UVLO protection for all power supplies

• Fast enable for power sequencing

2 Applications

• On-board battery chargers

• High-voltage DC-DC converter

• Automotive HVAC, body electronics

3 Description

The UCC21551x-Q1 is an isolated dual channel

gate driver family with programmable dead time

and wide temperature range. This device exhibits

consistent performance and robustness under

extreme temperature conditions. It is designed with

4-A peak-source and 6-A peak-sink current to drive

power MOSFET, SiC, and IGBT transistors.

The UCC21551x-Q1 can be configured as two lowside

drivers, two high-side drivers, or a half-bridge

driver. The input side is isolated from the two

output drivers by a 5-kVRMS isolation barrier, with

a minimum of 150-V/ns common-mode transient

immunity (CMTI).

Protection features include: resistor programmable

dead time, disable feature to shut down both outputs

simultaneously, integrated de-glitch filter that rejects

input transients shorter than 5 ns, and negative

voltage handling for up to –2-V spikes for 200 ns

on input and output pins. All supplies have UVLO

protection.