UCC21330-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• Universal: dual low-side, dual high-side or

halfbridge driver

• AEC-Q100 qualified with the following results

– Device temperature grade 1

– Device HBM ESD classification level H2

– Device CDM ESD classification level C4B

• Junction temperature range –40 to +150°C

• Up to 4A peak source and 6A peak sink output

• Common-mode transient immunity (CMTI) greater

than 125V/ns

• Up to 25V VDD output drive supply

– 8V VDD UVLO options

• Switching parameters:

– 33ns typical propagation delay

– 5ns maximum pulse-width distortion

– 10μs maximum VDD power-up delay

• UVLO protection for all power supplies

• Fast disable for power sequencing

2 Applications

• On-board battery chargers

• High-voltage DC-DC converters

• Automotive HVAC, body electronics

3 Description

The UCC21330-Q1 is an isolated dual channel gate

driver family with programmable dead time and wide

temperature range. It is designed with 4A peak-source

and 6A peak-sink current to drive power MOSFET,

SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side

drivers, two high-side drivers, or a half-bridge driver.

The input side is isolated from the two output drivers

by a 5kVRMS isolation barrier, with a minimum of

125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable

dead time, disable feature to shut down both outputs

simultaneously, and integrated de-glitch filter that

rejects input transients shorter than 5ns. All supplies

have UVLO protection.

With all these advanced features, the UCC21330-

Q1 device enables high efficiency, high power

density, and robustness in a wide variety of power

applications.