UCC21330BDR中文资料德州仪器数据手册PDF规格书

1 Features

• Universal: dual low-side, dual high-side or

halfbridge driver

• Junction temperature range –40 to +150°C

• Up to 4A peak source and 6A peak sink output

• Common-mode transient immunity (CMTI) greater

than 125V/ns

• Up to 25V VDD output drive supply

– 8V VDD UVLO options

• Switching parameters:

– 33ns typical propagation delay

– 5ns maximum pulse-width distortion

– 10μs maximum VDD power-up delay

• UVLO protection for all power supplies

• Fast disable for power sequencing

2 Applications

• On-board battery chargers

• High-voltage DC-DC converters

• Automotive HVAC, body electronics

3 Description

The UCC21330 is an isolated dual channel gate

driver family with programmable dead time and wide

temperature range. It is designed with 4A peak-source

and 6A peak-sink current to drive power MOSFET,

SiC, GaN, and IGBT transistors.

The UCC21330 can be configured as two low-side

drivers, two high-side drivers, or a half-bridge driver.

The input side is isolated from the two output drivers

by a 5kVRMS isolation barrier, with a minimum of

125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable

dead time, disable feature to shut down both outputs

simultaneously, and integrated de-glitch filter that

rejects input transients shorter than 5ns. All supplies

have UVLO protection.

With all these advanced features, the UCC21330

device enables high efficiency, high power density,

and robustness in a wide variety of power

applications.