Low-Power BiCMOS Current-Mode PWM

文件：4.19926 Mbytes 页数：26 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件：4.153819 Mbytes 页数：26 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

TI

德州仪器

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：63.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Can be driven by a 4.0-V power source • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

文件：227.66 Kbytes 页数：10 Pages

RENESAS

瑞萨

HIGH VOLTAGE RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead lengt

文件：272.18 Kbytes 页数：2 Pages

SY

顺烨电子