丝印：U5N；Package：DSBGA；SN74AUC1G19 1-of-2 Decoder/Demultiplexer

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：914.72 Kbytes 页数：25 Pages

TI

德州仪器

丝印：U5N；Package：DSBGA；SN74AUC1G19 1-of-2 Decoder/Demultiplexer

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：914.72 Kbytes 页数：25 Pages

TI

德州仪器

丝印：U5N2；Package：SOT-563；Plastic-Encapsulate Diodes

DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low cap

文件：287.99 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

N-Channel 650V (D-S)Power MOSFET

文件：1.90676 Mbytes 页数：9 Pages

VBSEMI

微碧半导体