Miniature Rocker Lever Handle Switches

文件：1.58957 Mbytes 页数：22 Pages

CK-COMPONENTS

力特

丝印：U33；Package：DFN2010P8；Transient Voltage Suppressors for ESD Protection

Features 200 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Two Bidirectional I/O Lines Low Clamping Voltage Ultra-small Package Requires Less Than 2.0x1.0mm of PCB area IEC61000-4-2(ESD):±30kV (air discharge) ±30kV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (

文件：2.78793 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：U33；Package：SOT-25；4V Drive PchSBD MOSFET

文件：89.61 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：U33；Package：SOT-25；4V Drive Pch SBD MOSFET

文件：70.44 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.75762 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：U33；Package：DFN2010；LIGHTNING AND ESD PROTECTION FOR GIGABIT ETHRNET INTERFACE

文件：935.06 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.56955 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

USB 3.2 Gen 1 Active Extension Cable - USB-C to USB-C (M/F), 5 Gbps, Data Only, 5 m (16.4 ft.)

16-Foot Extension Cable Connects Computers, Printers, Modems and Other USB-C EquipmentThis USB-C to USB-C Active Extension Cable (M/F) attaches to your current USB 3.0 cable to extend it by 5M (16.4-ft.). It connects your computer, tablet, notebook, MacBook Pro, Chromebook, smartphone or other

文件：165.79 Kbytes 页数：3 Pages

TRIPPLITE

Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：112.95 Kbytes 页数：10 Pages

IRF

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：139.15 Kbytes 页数：10 Pages

IRF