丝印：U33；Package：DFN2010P8；Transient Voltage Suppressors for ESD Protection

Features 200 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Two Bidirectional I/O Lines Low Clamping Voltage Ultra-small Package Requires Less Than 2.0x1.0mm of PCB area IEC61000-4-2(ESD):±30kV (air discharge) ±30kV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (

文件：2.78793 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：U33；Package：SOT-25；4V Drive PchSBD MOSFET

文件：89.61 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：U33；Package：SOT-25；4V Drive Pch SBD MOSFET

文件：70.44 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.75762 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：U33；Package：DFN2010；LIGHTNING AND ESD PROTECTION FOR GIGABIT ETHRNET INTERFACE

文件：935.06 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.56955 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：U330A；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 页数：47 Pages

TI

德州仪器

丝印：U330AQ；Package：SOIC；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater

文件：1.81427 Mbytes 页数：47 Pages

TI

德州仪器

丝印：U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 8V VDD UVLO options • Swi

文件：1.82951 Mbytes 页数：45 Pages

TI

德州仪器

丝印：U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 页数：47 Pages

TI

德州仪器