Half-bridge of power MOSFET/IGBT Drive

U3116C完全运行至 +200V 是高压、高速功率 MOSFET 和 IGBT 驱动器，具有独立的高侧和低侧参考输出通道。逻辑输入兼容标准 CMOS 或 LSTTL 输出，低至3.3V 逻辑。输出驱动级具有高脉冲电流缓冲级，专为最小驱动级交叉传导而设计。 浮动通道可用于驱动工作电压高达 200 伏的高侧配置中的 N 通道功率 MOSFET 或IGBT。

UNIU-SEMIC

宇力

Video Processor Family

VDP Applications As a member of the VDP 31xxB family, the VDP 3120B offers all video features necessary to design a state-ofthe-art TV set: Video Decoding – 4 composite inputs, 1 S-VHS input – composite video & sync output – integrated high-quality A/D converters – adapti

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MICRONAS

empty control station - XAP-A - plastic - 16 openings in 4 columns

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SCHNEIDER

施耐德

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET

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