TZB-TYB-TUB Series 10-Tap High Performance Passive Delays

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RHOMBUS-IND

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

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DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：103.58 Kbytes 页数：3 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：106.69 Kbytes 页数：4 Pages

DIODES

美台半导体