VCTCXO 3.2x2.5mm 32.0000MHz

文件：340.72 Kbytes 页数：7 Pages

TAI-SAW

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VCTCXO

TAI-SAW

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All Dimension IN MM

文件：47.43 Kbytes 页数：1 Pages

E-SWITCH

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

文件：256.38 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

文件：88.47 Kbytes 页数：7 Pages

RENESAS

瑞萨

SAW Resonator 719.75 MHz SMD 3X3 mm

文件：278.56 Kbytes 页数：6 Pages

TAI-SAW

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