MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

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TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：528.55 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power SiC MOSFETs

Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝

0.15A, 1200V N-CHANNEL DEPLETION-MODE POWER MOSFET

 DESCRIPTION The UTC UDF015N120 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES * RDS(ON) ≤ 500 Ω @ VGS=0V, ID=75mA * High Switching Speed

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UTC

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