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TW015N120CS1F中文资料PDF规格书
TW015N120CS1F规格书详情
Features
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)
(3) High voltage: VDSS = 1200 V
(4) Low drain-source on-resistance: RDS(ON) = 15 m
Ω (typ.)
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, I
D = 11.7
mA)
(6) Enhancement mode.
Applications
• Switching Voltage Regulators
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Toshiba |
23+ |
TO-247 |
3268 |
SIC芯片新能源供应全新正品 |
询价 | ||
Tekram |
23+ |
QFP |
8230 |
全新原装真实库存含13点增值税票! |
询价 | ||
Tekram |
16+ |
QFP |
890 |
进口原装现货/价格优势! |
询价 | ||
TST |
23+ |
SMD |
42337 |
全新原装现货,专业代理热卖 |
询价 | ||
TOSHIBA |
5 |
询价 | |||||
23+ |
N/A |
78500 |
一级代理放心采购 |
询价 | |||
TOSHIBA |
23+ |
NA |
5 |
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询价 | ||
TST |
23+ |
- |
35375 |
华南总代 |
询价 | ||
TOSHIBA |
24+ |
NA |
10250 |
只做原装现货13691986278微信 |
询价 |