首页 >TVPO2066-SSS>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
10TO2000MHzTO-8CASCADABLEAMPLIFIER TypicalValuesAC2066 HighGain-TwoStages.............................17.0dB HighOutputLevel.................................+15.0dBm | TELEDYNE TELEDYNE | TELEDYNE | ||
ADSLMICROFILTER | BOTHHAND Bothhand USA | BOTHHAND | ||
TO-8BCASCADABLEAMPLIFIER | TELEDYNE TELEDYNE | TELEDYNE | ||
2chHighSideSwitchICsforUSBDevicesandMemoryCards Description HighsideswitchforUSBisahighsideswitchhavingover-currentprotectionusedinpowersupplylineofuniversalserialbus(USB).ItsswitchunithastwochannelsofN-channelpowerMOSFET.And,over-currentdetectioncircuit,thermalshutdowncircuit,under-voltagelockoutands | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
HighsideswitchIC GeneralDescription BD2062FJandBD2066FJaredualchannelhighsideswitchICswithanover-currentprotectionforofUniversalSerialBus(USB)powersupplyline.ItsswitchunithastwochannelsofN-ChannelpowerMOSFET.Overcurrentdetectioncircuit,thermalshutdowncircuit,under-voltage | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
10-16GHzLowNoiseAmplifier | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
10-16GHzLowNoiseAmplifier Description TheCHA2066isatwo-stagewidebandmonolithiclownoiseamplifier. ThecircuitismanufacturedwithastandardHEMTprocess:0.25µmgatelength,viaholesthroughthesubstrate,airbridgesandelectronbeamgatelithography. MainFeatures •Broadbandperformance10-16GHz •2. | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
10-16GHzLowNoiseAmplifier | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
10-16GHzLowNoiseAmplifier Description TheCHA2066-QAGisatwo-stagewidebandmonolithiclownoiseamplifier.Typicalapplicationsrangefromtelecommunication(pointtopoint,pointtomulti-point,VSAT)toISMandmilitarymarkets. MainFeatures ■Broadbandperformance10-16GHz ■2.5dBnoisefigure,10-16GHz(BD) ■ | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
GaAsMonolithicMicrowaveICinSMDleadlesspackage | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
10-16GHzSelfbiasedLowNoiseAmplifier Description ThemonolithicmicrowaveIC(MMIC)inthepackageisatwo-stageselfbiasedwidebandmonolithiclownoiseamplifier. TheMMICismanufacturedwithastandardPM-HEMTprocess:0.25µmgatelength,viaholesthroughthesubstrate,airbridgesandelectronbeamgatelithography. | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
Asmallhigh-speedcurrentCenterforAppliedthermal | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
Voltage-ControlledOscillatorSurfaceMountModule | ZCOMM Z-Communications, Inc | ZCOMM | ||
Voltage-ControlledOscillatorSurfaceMountModule | ZCOMM Z-Communications, Inc | ZCOMM | ||
DIPSwitches | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
DIPSwitches | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
PreamplifierforHighResolutionComputerDisplay Description TheCXA2066SisabipolarICdevelopedforhighresolutioncomputerdisplays. Features •Built-inwidebandamplifier:140MHz@–3dB(Typ.) •Inputdynamicrange:1.0Vp-p(Typ.) •Highgainpreamplifier(17dB) •R,G,andBincorporatedinasinglepackage •I2Cbuscontrol | SonySONY 索尼索 尼 | Sony | ||
PreamplifierforHighResolutionComputerDisplay Description TheCXA2066SisabipolarICdevelopedforhighresolutioncomputerdisplays. Features •Built-inwidebandamplifier:140MHz@–3dB(Typ.) •Inputdynamicrange:1.0Vp-p(Typ.) •Highgainpreamplifier(17dB) •R,G,andBincorporatedinasinglepackage •I2Cbuscontrol | SonySONY 索尼索 尼 | Sony | ||
P-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALP-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ITT |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
N/A |
2308+ |
489692 |
一级代理,原装正品,公司现货! |
询价 | |||
ITT |
22+ |
DIP40 |
500000 |
行业低价,代理渠道 |
询价 | ||
新 |
1 |
全新原装 货期两周 |
询价 | ||||
AMPHENOL |
20+ |
连接器 |
93 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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