丝印：4B；Package：PW-Mini；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.1 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.20 V (max) (IC = -0.3 A, IB = -10 mA) (3) High-speed switching: tf = 90 ns (typ.) (IC =-0.3 A)

文件：465.05 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：High-speed switching / DC/DC converters\n\nFeatures：Low Satulation Voltage\n\nPolarity：PNP\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

600 V CCFL ballast driver IC

文件：110.47 Kbytes 页数：20 Pages

PHI

PHI

600 V CCFL ballast driver IC

文件：110.47 Kbytes 页数：20 Pages

PHI

PHI

600 V CCFL ballast driver IC

文件：110.47 Kbytes 页数：20 Pages

PHI

PHI