首页 >TT36N10LOF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)36mΩ ID30A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)36mΩ ID30A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=58mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=33mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP36N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)1=33mΩMAX.(VGS=10V,ID=18A) RDS(on)2=39mΩMAX.(VGS=4.5V,ID=18A) •LowCiss:Ciss=3500pFTYP.(VDS=2 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NChannelEnhancementModeMOSFET | STANSON Stanson Technology | STANSON | ||
36A,100VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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