丝印：UP10200；Package：TO-277A；10A, 200V Trench Schottky Surface Mount Rectifier

FEATURES AEC-Q101 qualified Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Switching mode p

文件：476.12 Kbytes 页数：6 Pages

TSC

台湾半导体

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件：145.78 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件：145.78 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件：145.78 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司