GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

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VishayVishay Siliconix

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Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • Hi

文件：142.51 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：143.23 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：149.75 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Package type: leaded\n Package form: TO-18\n Dimensions (in mm): ∅ 4.7\n\n ;

Vishay

威世

Package：TO-18-2 金属罐；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 950NM 250MA TO18

Vishay Semiconductor Opto Division

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • Hi

文件：142.51 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：149.75 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：143.23 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世