TSR835说明书PDF资料原装现货瑞萨TAITRON-114ic电子网

首页 >TSR835>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
TSR835	文件：135.32 Kbytes Page：5 Pages	8A Schottky Rectifier 文件：135.32 Kbytes 页数：5 Pages	TAITRON	TAITRON
TSR835	文件：300 bytes Page：1 Pages	8A Schottky Rectifier	TAITRON	TAITRON
UPA835	文件：71.64 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q 文件：71.64 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
UPA835TC	文件：71.64 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q 文件：71.64 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
USD835	文件：90.54 Kbytes Page：2 Pages	POWER SCHOTTKY RECTIFIERS 文件：90.54 Kbytes 页数：2 Pages	MICROSEMI 美高森美	MICROSEMI

更多TSR835供应商更新时间2026-10-23 11:01:00