N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correcti

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VBSEMI

微碧半导体

650V TRENCH GATE FIELD-STOP IGBT

 DESCRIPTION The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG7N65-S is suitable for the resonant or soft switching ap

文件：203.62 Kbytes 页数：4 Pages

UTC

友顺

650V Super-Junction Power MOSFET

文件：276.92 Kbytes 页数：6 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

文件：307.23 Kbytes 页数：8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司