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4416P

ThickFilmSurfaceMountedWideBodyTapeandreelpackagingstandard

BournsBourns Electronic Solutions

伯恩斯

4416P-LF

Networks

BournsBourns Electronic Solutions

伯恩斯

4416T-L

Networks

BournsBourns Electronic Solutions

伯恩斯

AP4416GH

LowerGateCharge,SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

APM4416

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

APM4416K

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

APM4416KCTR

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

APM4416KC-TR

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

APM4416KC-TRL

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

APM4416KCTU

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ANPECAnpec Electronics Coropration

茂达电子茂达电子股份有限公司

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