首页 >TSM170N06CP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=170A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
60VN-ChPowerMOSFET Feature ◇HighSpeedPowerSwitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinTe | HUNTECKHunteck Semiconductor 恒泰柯半导体恒泰柯半导体（上海）有限公司 | HUNTECK | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=170A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC |
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