FQA170N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=170A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FQA170N06

60VN-ChannelMOSFET

HGS170N06SL

60VN-ChPowerMOSFET

Feature ◇HighSpeedPowerSwitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinTe

NDBA170N06A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=170A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDBA170N06A

N-ChannelPowerMOSFET

TSM170N06

N-ChannelPowerMOSFET