Repeat Cycle ON-Time First Solid-State Output

文件：348.03 Kbytes 页数：1 Pages

ATC

丝印：12N06AT；Package：DFN5x6；60V N-Channel DTMOS

Features  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：446.78 Kbytes 页数：7 Pages

WUMC

紫光国微

N-Channel IGBT with FRD

General Description The TSG60N100CE using proprietary trench design andadvanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft switching applicati

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体

N-Channel IGBT with FRD

General Description The TSG60N100CE using proprietary trench design andadvanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft switching applicati

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体

650V, 30A, PDFN88, E-MODE GAN TR

FEATURES ● 650 V enhancement mode power transistor ● Bottom-cooled, 8x8 mm PDFN package ● RDS(on)(Typ) = 50 mΩ ● IDS(max) = 30 A ● Simple gate drive requirements (0 V to 6 V) ● Transient tolerant gate drive (-20 V / +10 V) ● High switching frequency (> 1 MHz) ● Fast and controllable fall a

文件：951.29 Kbytes 页数：10 Pages

TSC

台湾半导体

GaN FETs 650V, 18A, PDFN88, E-mode GaN Transistor

FEATURES ● 650 V enhancement mode power transistor ● Bottom-cooled, 8x8 mm PDFN package ● RDS(on)(Typ) = 78 mΩ ● IDSmax,DC = 18 A / IDSmax,Pulse = 35 A ● Simple gate drive requirements (0 V to 6 V) ● Transient tolerant gate drive (-20 V / +10 V) ● High switching frequency (> 1 MHz) ● Fast

文件：907.21 Kbytes 页数：10 Pages

TSC

台湾半导体

650V, 11A, PDFN56, E-MODE GAN TR

FEATURES ● 650 V enhancement mode power transistor ● Bottom-cooled, small 5x6 mm PDFN package ● RDS(on)(Typ) = 150 mΩ ● IDS(max) = 11 A ● Ultra-low FOM ● Simple gate drive requirements (0 V to 6 V) ● Transient tolerant gate drive (-20 V / +10 V) ● High switching frequency (> 1 MHz) ● Fast

文件：869.17 Kbytes 页数：10 Pages

TSC

台湾半导体

650V, 11A, PDFN88, E-MODE GAN TR

FEATURES ● 650 V enhancement mode power transistor ● 850 V transient drain-to-source voltage ● Bottom-cooled 8x8 mm PDFN package ● RDS(on)(Typ) = 150 mΩ ● DS(max) = 11 A / IDS(Max pulse) = 19A ● Ultra-low FOM ● Simple gate drive requirements (0 V to 6 V) ● Transient tolerant gate drive (-2

文件：901.26 Kbytes 页数：10 Pages

TSC

台湾半导体

GLASS TEMPERATURE SENSOR

PRODUCT DESCRIPTION The single point glass temperature sensor utilizes a precision sensor encapsulated in a 31.75mm L x 9.525mm W x 9.525mm H (1.25” x 0.375” x 0.375”) aluminum probe. Standard wire length is 1.524m (5’). All probes are constructed to provide excellent heat transfer, fast res

文件：146.6 Kbytes 页数：1 Pages

GREYSTONE

Ashcroft® SMART Transmitter Assemblies

文件：354.58 Kbytes 页数：4 Pages

ASHCROFT

雅斯科