首页 >TSF18N60MRMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
600VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
POLARHVHIPERFETPOWERMOSFET DESCRIPTION TheUTC18N60usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)≤0.5Ω@VGS=10V,ID=9A *Ul | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
18A,600VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastSwitching •FEATURES •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeFastIntrinsicDiodeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS |
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