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TSD4

EURO TERMINAL BLOCKS

[ADAM TECHNOLOGIES INC.] INTRODUCTION: Adam Tech TS series Euro Terminal Blocks offer the advantages of our leading designed while providing one of the lowest applied cost interconnections possible. This series includes 3 variations of our standard block, a microminiature type for ultra space sv

文件:534.9 Kbytes 页数:4 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

TSD4M150

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE ■ HIGH CURRRENT POWER MOS MODULE ■ Very Low Rth JUNCTION TO CASE ■ DUAL SOURCE CONTACTS ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT ■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALL

文件:354 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

TSD4M150F

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE ■ HIGH CURRRENT POWER MOS MODULE ■ Very Low Rth JUNCTION TO CASE ■ DUAL SOURCE CONTACTS ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT ■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALL

文件:354 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

TSD4M150V

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE ■ HIGH CURRRENT POWER MOS MODULE ■ Very Low Rth JUNCTION TO CASE ■ DUAL SOURCE CONTACTS ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT ■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALL

文件:354 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

TSD40U

TSD(1800W) Series

文件:270.57 Kbytes 页数:5 Pages

SPSEMI

瞬雷电子

TSD435

ASYMMETRICAL THYRISTOR THYRISTOR ASYMETRIQUE

文件:203.31 Kbytes 页数:6 Pages

STMICROELECTRONICS

意法半导体

TSD47

Lower Voltage Disc Capacitors

文件:152.77 Kbytes 页数:3 Pages

VishayVishay Siliconix

威世

TSD470

SMD POWER INDUCTOR-RoHS

文件:299.72 Kbytes 页数:4 Pages

FENGJUI

峰瑞科技

TSD471

SMD POWER INDUCTOR-RoHS

文件:299.72 Kbytes 页数:4 Pages

FENGJUI

峰瑞科技

TSD4N60M

Power MOSFET

文件:1.07807 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

技术参数

  • 最小击穿电压Vbr(V)@It:

    44.40

  • 最大击穿电压Vbr(V)@It:

    49.10

  • 测试电流It(mA):

    1

  • 箝位电压Vc@Ipp(V):

    64.5

  • 峰值脉冲电流Ipp@10/1000(A):

    27.9

  • 漏电流Ir(μA):

    1

供应商型号品牌批号封装库存备注价格
ST
11+
mokuai
8000
全新原装,绝对正品现货供应
询价
ST
24+
48
询价
ST
25+
模块
18000
原厂直接发货进口原装
询价
ST
23+
模块
130
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
场效应
22+
模块
600
原装现货库存.价格优势
询价
Truesemi
25+23+
TO-220
24397
绝对原装正品全新进口深圳现货
询价
韩国信安
18+
TO-252
41200
原装正品,现货特价
询价
ST
24+
54
现货供应
询价
ST
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
ST
24+
模块
6430
原装现货/欢迎来电咨询
询价
更多TSD4供应商 更新时间2025-10-11 11:04:00