TSD1760CPR

Low Vce(sat) NPN Transistor

TSD1760CPRO

Low Vcesat NPN Transistor

TSD1760CPS

LowVce(sat)NPNTransistor

TVCO-1760

SMDVOLTAGECONTROLLEDOSCILLATOR(12.8X12.8X4.0MM)

FEATURES WIDEFREQUENCYRANGEVCO LOWPHASENOISE FASTDELIVERY/LOWCOST CUSTOMFREQUENCYRANGEAVAILABLE-CONTACTSALES@TRANSKO.COM

TZ1760A

CrystalUnitSMD2.0x1.624MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ1760E

CrystalUnitSMD2.0x1.624.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwireless

UM1760

TheSTLUXSMEDconfiguratorisapowerfulgraphical

UPA1760

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1760isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •DualChipType •LowOn-Resistance RDS(on)1=26.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=36.0mΩMAX.(V

UPA1760

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA1760isN-ChannelMOSFieldEffectTransistor designedforDC/DCConvertersandpowermanagement applicationofnotebookcomputers. FEATURES •DualChipType •LowOn-Resistance RDS(on)1=26.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=36.0mΩMAX.(VGS=4.5V,ID=

UPA1760G

DualN-ChannelMOSFETusesadvancedtrenchtechnology