首页 >TSC4429EOA>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DELAYMODULES,TTL,SURFACEMOUNTED | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
TheRPC56xxandSPC56xxfamiliesofdeviceshaveinternalFlash | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4429usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.Thisdeviceissuitableforuseasaloadswitch.ThedeviceisESDprotected.StandardProductAO4429isPb-free(meetsROHS&Sony259specifications).AO4429Lisa | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4429usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.Thisdeviceissuitableforuseasaloadswitch.ThedeviceisESDprotected.StandardProductAO4429isPb-free(meetsROHS&Sony259specifications).AO4429Lisa | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
Ultra_LowOn-resistance,SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
P-ChannelEnhancementModeMOSFET Features •-30V/-13A, RDS(ON)=8mW(typ.)@VGS=-20V RDS(ON)=9mW(typ.)@VGS=-10V RDS(ON)=13mW(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-30V/-13A, RDS(ON)=8mW(typ.)@VGS=-20V RDS(ON)=9mW(typ.)@VGS=-10V RDS(ON)=13mW(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-30V/-13A, RDS(ON)=8mW(typ.)@VGS=-20V RDS(ON)=9mW(typ.)@VGS=-10V RDS(ON)=13mW(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-30V/-13A, RDS(ON)=8mW(typ.)@VGS=-20V RDS(ON)=9mW(typ.)@VGS=-10V RDS(ON)=13mW(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-30V/-13A, RDS(ON)=8mW(typ.)@VGS=-20V RDS(ON)=9mW(typ.)@VGS=-10V RDS(ON)=13mW(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC |
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