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TS20P06GH

包装:管件 封装/外壳:4-SIP,TS-6P 类别:分立半导体产品 二极管 - 桥式整流器 描述:BRIDGE RECT 1P 800V 20A TS-6P

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

TS20P06GHC2G

包装:管件 封装/外壳:4-SIP,TS-6P 类别:分立半导体产品 二极管 - 桥式整流器 描述:BRIDGE RECT 1P 800V 20A TS-6P

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CHM20P06PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

EMB20P06A

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

ME20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTD20P06

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MotorolaMotorola, Inc

摩托罗拉

MTD20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTD20P06HDL

P?묬hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD20P06HDL

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MotorolaMotorola, Inc

摩托罗拉

NP20P06SLG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

产品属性

  • 产品编号:

    TS20P06GH

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 桥式整流器

  • 系列:

    Automotive, AEC-Q101

  • 包装:

    管件

  • 二极管类型:

    Single Phase

  • 技术:

    标准

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    4-SIP,TS-6P

  • 供应商器件封装:

    TS-6P

  • 描述:

    BRIDGE RECT 1P 800V 20A TS-6P

供应商型号品牌批号封装库存备注价格
TAIWAN
1809+
TS-6P
3675
就找我吧!--邀您体验愉快问购元件!
询价
TSC America Inc.
22+
9000
原厂渠道,现货配单
询价
TSC/台湾半导体
23+
DIP-4
50000
全新原装正品现货,支持订货
询价
TSC/台湾半导体
2048+
DIP-4
9851
只做原装正品现货!或订货假一赔十!
询价
TSC
DIP-4
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
TSC
23+
DIP-4
8560
受权代理!全新原装现货特价热卖!
询价
TSC
22+23+
DIP-4
27659
绝对原装正品全新进口深圳现货
询价
TSC/台湾半导体
23+
DIP-4
30000
全新原装现货,价格优势
询价
TSC
22+
DIP-4
32350
原装正品 假一罚十 公司现货
询价
TSC/台湾半导体
22+
DIP-4
50000
只做原装假一罚十,欢迎咨询
询价
更多TS20P06GH供应商 更新时间2021-9-14 10:50:00