丝印：TRS8V65H；Package：DFN8x8；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 μA (typ.

文件：452.16 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：TRS8V65H；Package：DFN8x8；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 μA (typ.

文件：452.16 Kbytes 页数：7 Pages

TOSHIBA

东芝