丝印：S2E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 6.5 nC (typ.) (4) Low reverse current: IR = 0.2 μA (typ

文件：443.15 Kbytes 页数：7 Pages

TOSHIBA

东芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

SiC Schottky Barrier Diode

文件：255.97 Kbytes 页数：6 Pages

TOSHIBA

东芝

TI
N/A

TI

德州仪器

上传：深圳市特瑞斯科技有限公司

TI/德州仪器
TSSOP16

TI/德州仪器

上传：深圳市明嘉莱科技有限公司